Kinetic Analysis of the Chemical Processes in the Decomposition of Gaseous Dielectrics by a Non-Equilibrium Plasma - Part 2: SF6 and SF6/O2

Abstract

In this work, a numerical modelling analysis of the gas-phase decomposition of pure SF6 and SF6/O2 mixtures, in the presence of silicon was performed. The relative rate of individual processes, the effect of the parameters uncertainties and the sensitivity coefficients were determined. The results were compared with literature experimental data for the plasma etching of silicon and with previous simulated results to adjust the model parameters. As in the CF4 system, the main etching agent is atomic fluorine and the concentration of the major species depends on the composition of the mixture. The shape of the sensitivity curves follows the general shape of the individual rate curves and the ratio between the calculated sensitivity coefficients is closely related to the contribution of each reaction.