Tuning the threshold voltage in organic thin-film transistors by local channel doping using photoreactive interfacial layers

Abstract

The insertion of a thin photoacid generator layer between the dielectric and the active layer in organic thin-film transistors (OTFTs) allows control of the threshold voltage through UV illumination by means of interfacial channel doping. All p-type organic inverters can be realized by combining an OTFT working in depletion mode and one operating in enhancement mode. Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.