Quantum-size effects in hafnium-oxide resistive switching

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Abstract

Discrete changes of conductance of the order of G0 2e 2/h reported during the unipolar reset transitions of Pt/HfO 2/Pt structures are interpreted as the signature of atomic-size variations of the conducting filament (CF) nanostructure. Our results suggest that the reset occurs in two phases: a progressive narrowing of the CF to the limit of a quantum wire (QW) followed by the opening of a spatial gap that exponentially reduces the CF transmission. First principles calculations show that oxygen vacancy paths in HfO2 with single- to few-atom diameters behave as QWs and are capable of carrying current with G0 conductance. © 2013 AIP Publishing LLC.

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Long, S., Lian, X., Cagli, C., Cartoixà, X., Rurali, R., Miranda, E., … Suñé, J. (2013). Quantum-size effects in hafnium-oxide resistive switching. Applied Physics Letters, 102(18). https://doi.org/10.1063/1.4802265

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