Bias stress stability of solution-processed nano indium oxide thin film transistor

Abstract

In this paper, the effects of annealing temperature and other process parameters on spin-coated indium oxide thin film transistors (In2 O3-TFTs) were studied. The research shows that plasma pretreatment of glass substrate can improve the hydrophilicity of glass substrate and stability of the spin-coating process. With Fourier transform infrared (FT-IR) and X-ray diffraction (XRD) analysis, it is found that In2 O3 thin films prepared by the spin coating method are amorphous, and have little organic residue when the annealing temperature ranges from 200 to 300◦ C. After optimizing process conditions with the spin-coated rotating speed of 4000 rpm and the annealing temperature of 275◦ C, the performance of In2 O3-TFTs is best (average mobility of 1.288 cm2·V−1·s−1, Ion /Ioff of 5.93 × 106, and SS of 0.84 V·dec−1 ). Finally, the stability of In2 O3-TFTs prepared at different annealing temperatures was analyzed by energy band theory, and we identified that the elimination of residual hydroxyl groups was the key influencing factor. Our results provide a useful reference for high-performance metal oxide semiconductor TFTs prepared by the solution method.