Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

Abstract

A multiwalled carbon nanotube (MWNT) based single-electron transistors (SET) were manufactured using atomic force microscopy (AFM) manipulation. Its current-voltage characteristics were measured. Single-electron charging effects were shown through gate modulation. The results imply the MWNT to be semiconducting with a gap of 15 meV. The Coulomb staircase structure in the data agrees with the asymmetry of the tunnel junctions. The method combined with electron-beam soldering opens new possibilities to optimize junction parameters for specific purposes. This could give new opportunities in the fabrication of single electron transistors.