GaAs-based nanowires studied by low-temperature cathodoluminescence

Abstract

We present cathodoluminescence data of nanowires (NWs) grown using size-selected gold particles as seeds. The NWs have a GaAs core with a diameter of 50 nm and a length of several |im. The NWs in this study were generally covered with a shell of AlGaAs. With increasing growth temperature, the emission intensity increases significantly. From a variety of growth conditions, we conclude that the exposed sides of the NWs during growth play an important role in the emission intensity. The diffusion of carriers was studied by inserting a segment of GalnAs in GaAs NWs. By capping the NWs with an AlGaAs shell, we observe a tenfold increase in the diffusion length along the core.