Observation of recombination-enhanced defect reactions in semiconductors

Abstract

Recombination-enhanced annealing of defects in semiconductors has been observed directly for the first time. The defects were produced in GaAs by 1-MeV electron irradiation and observed by transient-junction-capacitance techniques. The data clearly relate the enhanced defect annealing rate to electron-hole recombination processes at the defect. © 1974 The American Physical Society.