Drift and noise of the carrier-envelope phase in a Ti:sapphire amplifier

Abstract

We report on the drift and noise measurement of the carrier-envelope phase (CEP) of ultrashort pulses in a three-pass Ti:sapphire-based amplifier. Spectrally and spatially resolved interferometry makes it possible to investigate the absolute CEP changes due exclusively to the amplifier, that is, entirely separated from the incidental phase fluctuations of the oscillator. We found that propagation through the amplifier crystal could result in an increase up to 30 mrad noise depending on the repetition rate, cooling, and pumping conditions. Most of this noise is related to mechanical vibrations and thermal instabilities. The absolute CEP drift of thermal origin can be as large as 11 mrad/°C for each mm of the amplifier crystal, originating from inefficient heat conduction during the absorption of pump pulses. The noise of the thermal CEP drift is inversely proportional to the repetition rate, as was shown experimentally and proven by simulations.