Nanowire single-crystal grain and single grain boundary silicon field effect transistors for direct electrical characterization of grain boundaries

Abstract

Single crystal grain (s-G) and single grain boundary (s-GB) Si field effect transistors (FETs) were investigated for direct measurement of the electrical activity of GBs. Ultrahigh-performance nanowire s-G FET with 1360 cm2V−1s−1 electron field-effect mobility (μ ef) was achieved on a transparent substrate. The significant difference of μ ef values between nanowire and microwire FETs proved that uniaxial tensile strain typically contributed to μ ef enhancement in nanowire FETs. Longitudinal GBs typically increased the leakage current and S factor due to a large donor concentration. The donor concentration generated by Σ3 and other CSL-type s-GBs was estimated.