Abstract
We demonstrated that modulated infrared radiation can cause the resonant excitation of plasma oscillations in quantum well diode and transistor structures with high electron mobility. This effect provides a new mechanism for the generation of tunable terahertz radiation using photomixing of infrared signals. We developed a device model for a quantum well photomixer and calculated its high-frequency performance. It was shown that the proposed device can significantly surpass photomixers utilizing standard quantum well infrared photodetectors. © 2002 American Institute of Physics.
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CITATION STYLE
Ryzhii, V., Khmyrova, I., & Shur, M. (2002). Terahertz photomixing in quantum well structures using resonant excitation of plasma oscillations. Journal of Applied Physics, 91(3), 1875–1881. https://doi.org/10.1063/1.1431436
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