Structural and optical characterization of GaSb layers on Si (001) substrates

Abstract

We investigated the growth of GaSb layers on Si (001) substrates by molecular beam epitaxy (MBE). Epilayers were grown as a function of Sb 4/Ga beam equivalent pressure ratio (BEPR). They were then characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence (PL), micro Raman scattering analysis. We confirmed that the optimum condition to grow relative high quality GaSb layer in this study was Sb4/Ga=20. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.