Reading and writing operations of memory device in micro-electromechanical resonator

Abstract

Micro-electromechanical resonators substantially exhibit bistable and hysteretic response when nonlinear characteristics appear. Badzey et al. reported that the nonlinear micro-electromechanical resonators can be used as a mechanical 1 bit memory. Based on their results, the authors propose reading and writing operations of the memory device. The reading and writing operations imply a displacement measurement and a switching of two stable periodic vibrations, respectively. In this paper, we realize a displacement measurement along an approach avoiding supplemented sensors. In addition, we achieve the switching operation between two coexisting periodic states by a displacement feedback control. © IEICE 2012.