Microstructure and crystal defects in epitaxial ZnO film grown on Ga modified (0001) sapphire surface

Abstract

Surface modification of sapphire (0001) by Ga can eliminate multiple rotation domains in ZnO films. The existence of Ga at ZnO/sapphire interface was confirmed by x-ray energy dispersive spectroscopy in a transmission electron microscope. Atomic detail of mismatch dislocations at interface was imaged by high resolution transmission electron microscopy. Inside the ZnO film, there is a high density of stacking fault. Both pure gliding of ZnO (0001) plane and condensation of vacancies or interstatials are possible mechanisms to generate the stacking fault. © 2004 American Institute of Physics.