Analysis of gain saturation behavior in GaN based quantum well lasers

Abstract

A simple model for the analysis of the optical gain and its saturation will be presented. Our experimental results show that the conventional saturation term based on the assumption of a linear differential gain behavior is improper to describe the measured data of GaN-based quantum-well structures. An analytical description of gain saturation and the amplified spontaneous emission intensity is quite suitable to explain the experiments. The results fit very well to the data that we obtained by use of the variable stripe-length method. They yield further information about the saturation process which will be discussed in detail. © 2002 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.