High-accuracy proximity effect correction for mask writing

Abstract

A high-accuracy proximity effect correction method for high-precision masks has been developed to satisfy current and future requirements. In this paper, we explain the primary features of this method and the theories on which it is based. The developed formula for obtaining the optimum correction dose is expressed in the form of either iterations or an infinite series of functions. The advantage of this formula is that it quickly converges to the sought value, bringing about high-accuracy proximity effect correction with a high calculation speed. A coarse graining method (covering pattern density and representative figure methods) for reducing calculation time is explained. This method has been adopted for an EX-11 series and has been used for mask writing from the 180 nm design rule onward. © 2007 The Japan Society of Applied Physics.