Abstract
In this letter, charge-based capacitance measurement (CBCM) is applied to characterize bias-dependent capacitances in a CMOS transistor. Due to its special advantage of being free from the errors induced by charge injection, the operation of charge-injection-induced-error-free CBCM allows for the extraction of full-range gate capacitance from the accumulation region to the inversion region and the overlap capacitance of MOSFET devices with submicrometer dimensions. © 2006 IEEE.
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Chang, Y. W., Chang, H. W., Lu, T. C., King, Y. C., Ting, W., Ku, Y. H. J., & Lu, C. Y. (2006). Charge-based capacitance measurement for bias-dependent capacitance. IEEE Electron Device Letters, 27(5), 390–392. https://doi.org/10.1109/LED.2006.873368
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