Fabrication method of the patterned mask for controllable growth of low-dimensional semiconductor nanostructures

Abstract

One of the important problems on the way to development of highly efficient optoelectronic devices such as silicon-based light-emitting diodes, hybrid solar cells as well as semiconductor lasers based on quantum dots is to obtain nanostructures with high crystalline perfection and small size dispersion. In this paper, we studied the method of thegrowth mask fabrication using photolithography through a close-packed array of microspherical lenses to obtain monodisperse nanostructures on a silicon growth substrate for the subsequent epitaxy of ordered GaP nanowires (NWs) array with a controllable morphology. Theoretical modeling of UV wave propagation demonstrated the possibility of the light focusing under a microspherical lenses array in the photoresist. With the method use the growth masks made of silicon oxide on Si (111) substrates were fabricated. Molecular-beam epitaxy was used to synthesize GaP NW ordered arrays.