Rapid Reduction of Graphene Oxide Thin Films on Large-Area Silicon Substrate

Abstract

Graphene oxide thin films were fabricated on 8-inch silicon/silicon dioxide (Si/SiO2) wafers for nanoelectronic applications. The fabrication was performed using an ultrasonic spray coating method and reduced by rapid thermal processing (RTP). The micrometer-sized droplets from an ultrasonic spray of stable dispersion Graphene Oxide (GO) in ethanol form uniforms films on large-area silicon substrates. Optical microscope images clearly showed uniform thin films resulting from the overlapped of GO dispersion droplets. The chemical and structural parameter characterization were performed by field emission scanning electron microscopy and X-ray photoelectron spectroscopy (XPS). The spray coating process using an ultrasonic atomizer system with optimum parameters and the thermal reduction process using RTP at 1100 °C produces low sheet resistance values ranging from 1 to 4 kOhms/sq with non-uniformity less than 20%.