GaN based nanorod light emitting diodes by selective area epitaxy

Abstract

Site-controlled, vertically aligned gallium nitride nanorod light emitting diode (LEDs) arrays with high aspect ratio have been synthesized via catalyst-free metalorganic chemical vapor deposition. Nanorod LEDs arrays with ∼1 μm in length and ∼200 nm in diameter were prepared on n-type gallium nitride film on sapphire substrates using nanoporous silicon dioxide as a growth mask patterned by anodized aluminum oxide. GaN nanorod LEDs demonstrate a higher photoluminescence in intensity, compared to that of a planar GaN. This is contributed to the improvement of light extraction due to the faceted nanostructures and the improvement in crystal quality. In addition, more Indium incorporation has been demonstrated compared to the control LEDs structure. (Figure Presented) Schematic diamgram of GaN nanorod LED arrays grown though SiO2 mask and its cross-sectional view showing the location of the InGaN multiple quatum wells (QWs). © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.