Growth optimization and optical properties of AlGaNAs alloys

Abstract

The effect of Al on the surface morphology of chemical beam epitaxy grown AlGaNAs alloys is studied. Pits attributed to N clustering appearing on the dilute nitride surface become smaller, denser, and more uniformly distributed in the presence of Al. This reveals that the introduction of Al results in more homogenous N atoms spatial distribution. A growth temperature study reveals the formation of 3D structures at high temperature due to phase separation. The density of these structures decreases, while their diameter and height increase when the temperature is raised from 380 °C to 565 °C. At growth temperatures in the 380-420 °C range, the phase separation is suppressed and the growth mode is 2D. At 420 °C, the N incorporation is also maximized, making it the optimum temperature. The absorption coefficient and the bandgap of AlGaNAs alloys are extracted from transmittance measurement. A good agreement is obtained between the experimentally measured bandgap and the theoretical values calculated using the band anticrossing model. A bandgap as low as 1.22 eV was reached using Al and N concentrations of ∼15% and ∼3.4%, respectively. © 2014 AIP Publishing LLC.