Self-assembled monolayer modification of indium tin oxide anode surface for polymer light-emitting diodes with poly[2-methoxy-5-(2-ethylhexyloxy)-1,4- phenylene vinylene] for high performance

48Citations
Citations of this article
21Readers
Mendeley users who have this article in their library.
Get full text

Abstract

We demonstrate that introducing a self-assembled monolayer (SAM) derived from 1,1,1,3,3,3-hexamethyldisilazane on an indium tin oxide (ITO) anode surface for the device (ITO/SAM/poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene]/ CaAl), can lead to an improvement in maximum device efficiency from 2.0 to 3.9 cdA and maximum brightness from 33 000 to 34 400 cd m2. Such improvement is even better than that with introducing a layer of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (2.6 cdA and 16 000 cd m2), which is usually used as a hole transport (or injection) layer. The improvement results from a hole blocking effect and better wetting by converting the ITO surface from hydrophilic to hydrophobic provided by the SAM. © 2005 American Institute of Physics.

Cite

CITATION STYLE

APA

Hsiao, C. C., Chang, C. H., Hung, M. C., Yang, N. J., & Chen, S. A. (2005). Self-assembled monolayer modification of indium tin oxide anode surface for polymer light-emitting diodes with poly[2-methoxy-5-(2-ethylhexyloxy)-1,4- phenylene vinylene] for high performance. Applied Physics Letters, 86(22), 1–3. https://doi.org/10.1063/1.1942644

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free