Temperature influence and reset voltage study of bipolar resistive switching behaviour in ZrO2 thin films

Abstract

We have fabricated ZrO2 thin films by sol-gel deposition and annealed them at 300, 500 and 700 °C. Reproducible I-V curves can be obtained for the device Cu/ZrO2/ATO which is measured at room temperature (300 K). During the RESET operation, RL and RH values can be controlled by the RESET voltage. Moreover, the Cu/ZrO 2/ATO device which the ZrO2 thin film annealed at 300 °C can be measured as resistive switching sweeps at 200, 100 and 50 K. It was found that the ratio of Roff/Ron reduced when the measured temperature decreased. When the I-V measurement temperature decreases, Ron decreases obviously which is typical for electronic transportation in a Cu metal. It is indicated that the Cu metallic conduction filament has been formed in the ZrO2 films. Besides, the microstructure by high resolution transmission electrical microscopy (HRTEM) was also investigated. © Indian Academy of Sciences.