Quantification of defects engineered in single layer MoS2

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Abstract

Atomic defects are controllably introduced in suspended single layer molybdenum disulfide (1L MoS2) using helium ion beam. Vacancies exhibit one missing atom of molybdenum and a few atoms of sulfur. Quantification was done using a Scanning Transmission Electron Microscope (STEM) with an annular detector. Experimentally accessible inter-defect distance was employed to measure the degree of crystallinity in 1L MoS2. A correlation between the appearance of an acoustic phonon mode in the Raman spectra and the inter-defect distance was established, which introduces a new methodology for quantifying defects in two-dimensional materials such as MoS2

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Aryeetey, F., Ignatova, T., & Aravamudhan, S. (2020). Quantification of defects engineered in single layer MoS2. RSC Advances, 10(39), 22996–23001. https://doi.org/10.1039/d0ra03372c

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