Abstract
The development of the microstructure of mechanical-deformation-induced Sn whiskers on electroplated films has been examined using a focused ion beam system (FIB). The 6-μm-thick matte Sn films were compressed by using a ZrO 2 ball indenter under ambient conditions. After compression, tin whiskers and small nodules were found adjacent to, and several grains further away from, the indents. The cross-sectional microstructures of the indents and whiskers indicate that the lateral boundaries of the newly created grains caused by recrystallization are the main routes for stress relaxation. © 2007 TMS.
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Lin, S. K., Yorikado, Y., Jiang, J., Kim, K. S., Suganuma, K., Chen, S. W., … Yanada, I. (2007). Microstructure development of mechanical-deformation-induced Sn whiskers. Journal of Electronic Materials, 36(12), 1732–1734. https://doi.org/10.1007/s11664-007-0284-4
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