Abstract
A photodiode consisting of a p-n junction embedded in an InAs 0.09Sb0.91/InSb strained-layer superlattice with equal 130-Å-thick layers was grown using molecular beam epitaxy. This nonoptimized device exhibited photoresponse out to a wavelength of 8.7 μm at 77 K. The resistance and the minority-carrier diffusion length of the photodiode result in a detectivity (3×109 cm Hz1/2/W) at 7 μm that is within one order of magnitude of the detectivity of the best HgCdTe detectors at that wavelength.
Cite
CITATION STYLE
Kurtz, S. R., Dawson, L. R., Zipperian, T. E., & Lee, S. R. (1988). Demonstration of an InAsSb strained-layer superlattice photodiode. Applied Physics Letters, 52(19), 1581–1583. https://doi.org/10.1063/1.99087
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