Development of low parasitic light sensitivity and low dark current 2.8 µm global shutter pixel

Abstract

We developed a low parasitic light sensitivity (PLS) and low dark current 2.8 µm global shutter pixel. We propose a new inner lens design concept to realize both low PLS and high quantum efficiency (QE). 1/PLS is 7700 and QE is 62% at a wavelength of 530 nm. We also propose a new storage-gate based memory node for low dark current. P-type implants and negative gate biasing are introduced to suppress dark current at the surface of the memory node. This memory node structure shows the world smallest dark current of 9.5 e-/s at 60 °C.