An analytical modeling for dual source vertical tunnel field effect transistor

Abstract

The given paper proposes the 2D analytical modeling of surface potential and electric field for a Dual Source Vertical Tunnel Field Effect Transistor (DSV-TFET). The 2-D Poisson equations are solved by parabolic approximation method, with the help of suitable boundary conditions and analytical expressions for surface potential and electric field distribution in DSV-TFET. The analytical results of proposed model are compared with simulation results drive using SILVACO TCAD tool, whereas in our proposed device DSV-TFET provides the high on current (ION=1.74×10-4 A/µm), low OFF current (IOFF= 6.92 ×10-13 A/µm), ION/IOFF current ratio in order of 108 to 109 with the minimum point of average subthreshold slope of 3.47 mV/decade which can be used for low power application.