Temperature Dependence of the Density of States and the Change in the Band Gap in Semiconductors

Abstract

The temperature dependence of the density of energy states in semiconductors has been studied. Strong doping with impurities with deep levels broadens the conduction band and the valence band. This enhances the absorption of light below the red border. Consequently, a possible change in the width of the forbidden zone. In this paper, using the mathematical model, temperature dependence of the density spectrum of states, changes in the band gap are shown by analyzing the density spectrum of energy states, an explanation of the anomalous temperature dependence in acceleration semiconductors is proposed, the effects of doping with a high concentration on the band gap of the semiconductor are investigated. Explained absorption in the range of 0.6-0.9 eV for silicon.