Preparation and thermoelectric properties of mg2si1−xgex(x=0.0∼0.4) Solid solution semiconductors

Abstract

Mg2Si1−xGex Solid Solution Semiconductors were prepared in the composition range 0.0≤x≤0.4. At a composition x=0.4, effects of impurities were investigated for dopants of Sb and Ag. Carrier concentrations were controlled up to 1.5×1026 electrons/m3 and 5.5×1025 holes/m3 by doping Sb and Ag, respectively. The thermal conductivity κ was measured at 300 K. By calculating the electronic thermal conductivity κel based on the Fermi integration, the lattice thermal conductivity κph was estimated to be 2.10 Wm−1K−1. Figure-of-merits Z's of Mg2Si0.6Ge0.4 at 300 K were 0.69×10−3K−1 for the n-type sample with an electron concentration of 5.4×1025m−3 (3000 ppmSb) and 0.47×10−3K−1 for the p-type one with a hole concentration of 5.2×1025m−3 (16000 ppmAg). © 1992, The Japan Institute of Metals. All rights reserved.