Interpretation of Transient Currents in Amorphous Silicon Hydride p-i-n n-i-n Devices

Abstract

Transient current experiments on amorphous silicon hy- dride p-i-n n-i-n devices have been performed by Silver el al. as a means of studying the effects of localized states on charge transport in this material. However, some of the features of the observed current transients were not thoroughly understood. in this paper, simulations of these experiments are used to explain the experimental results to evaluate the parameter set used in the simulation. © 1989 IEEE