Effect of alloy composition on photoluminescence properties of europium implanted AlGaInN

Abstract

Eu ions are introduced into GaN, AlxGa1-xN and InyGa1-yN by ion implantation to investigate the effect of alloy composition on photoluminescence properties. Strong and sharp red emission peaks related to the Eu3+ 4fn transitions are observed around 621 nm from whole Eu-implanted samples at room temperature. In the case of Eu doped AlxGa1-xN, the photoluminescence intensity is stronger than that of Eu doped GaN, while the decay time is shorter than that of Eu doped GaN. This result suggests that the transition probability of Eu3+ can be increased by using AlGaN as a host material. On the other hand, in the case of Eu doped InGaN, the decay time is shorter than that of Eu doped GaN. However, the intensity is very weak compared with Eu doped GaN, meaning that the InGaN layer degrades by the thermal annealing. © 2002 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.