Directly patterned low voltage planar tungsten lateral field emission structures

Abstract

Using high resolution electron beam lithography it has been possible to directly pattern planar structures which exhibit lateral conduction characteristics that are consistent with field emission. Two terminal and three terminal structures have been fabricated in a tungsten layer on an insulating substrate using a combination of an aluminum lift-off and dry etching. By careful control of the electrode spacings it has been possible to ensure that the emission occurs for voltages less than 100 V. In the three terminal structures fabricated a high proportion of the emitted current reaches the collector.