Palladium enhanced etching of n-type silicon in hydrofluoric acid solution

Abstract

Pd-particle-modified n-Si can be etched at a high rate in a hydrofluoric acid solution without a particular oxidizing agent under dissolved oxygen free and dark conditions. In this study, Pd thin film patterned n-Si is used. The etching is localized at the boundary between the 29-nm-thick-Pd film and the non-Pd-deposited area of the n-Si surface at the initial stage. Then Pd particles form on the non-Pd-deposited area toward which the etched area extends. Thin (4.3 nm) Pd films localize the etching under the films.