Abstract
The luminescence properties of amorphous silicon (a-Si)-based nanostructures have been studied. The photoluminescence (PL) intensity is enhanced in both a-Si nanoparticles and a-Si quantum wells compared to the case of bulk a-Si. In a-Si nanostructures, the PL intensity depends weakly on the measurement temperature and visible PL is observed at room temperature, while in bulk a-Si the near-infrared PL disappears at temperatures above 150 K. The luminescence mechanism and quantum confinement effects of localized carriers are discussed.
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CITATION STYLE
Kanemitsu, Y., Sato, H., Nihonyanagi, S., & Hirai, Y. (2002). Quantum confinement of localized excitons in amorphous silicon nanostructures. In Physica Status Solidi (A) Applied Research (Vol. 190, pp. 769–773). https://doi.org/10.1002/1521-396X(200204)190:3<769::AID-PSSA769>3.0.CO;2-K
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