Low-programmable-voltage nonvolatile memory devices based on omega-shaped gate organic ferroelectric P(VDF-TrFE) field effect transistors using p-type silicon nanowire channels

Abstract

A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)). We overcame the interfacial layer problem by incorporating P(VDF-TrFE) as a ferroelectric gate using a low-temperature fabrication process. Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 105, a long retention time greater than 3 × 104s, and a high endurance of over 105 programming cycles while maintaining an ION/IOFF ratio higher than 102.