Abstract
Introduction: Aggressive device scaling aggravates the problems of poly-Si gate depletion and boron penetration. Metal gate is thus exploited to replace poly-Si. Here we investigate the impact of metal gate work function φB on tunneling leakage current in MOSFETs.
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CITATION STYLE
APA
Hou, Y. T., Li, M. F., Low, T., & Kwong, D. L. (2003). Impact of metal gate work function on gate leakage of MOSFETs. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (pp. 154–155). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/ISDRS.2003.1272039
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