Abstract
Growth optimization, optical and structural properties of PbTe/CdTe multilayers grown by molecular beam epitaxy on GaAs (001) as well as on BaF 2 (111) substrates is reported. An intense photoluminescence in the mid-infrared region is observed from PbTe quantum wells excited with 1.17 eV pulsed YAG:Nd laser. The energy of the emission peak shows blue shift with decreasing PbTe well width and has a positive temperature coefficient. The influence of thermal annealing on photoluminescence spectra of PbTe/CdTe multilayers grown on BaF2 substrate is discussed.
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CITATION STYLE
Szot, M., Kowalczyk, L., Smajek, E., Domukhovski, V., Domagała, J., Łusakowska, E., … Story, T. (2008). Epitaxial growth and optical properties of PbTe/CdTe semiconductor heterostructures. In Acta Physica Polonica A (Vol. 114, pp. 1391–1396). Polish Academy of Sciences. https://doi.org/10.12693/APhysPolA.114.1391
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