Abstract
Heterojunctions of hydrogenated a-Si films prepared by r.f. sputtering with spraypyrolyzed CuInS2 films have been studied. Capacitance-voltage measurements establish the formation of abrupt heterojunction. The barrier height varies from 0·26 to 0·55 V as the resistivity of CuInS2 film decrease from 1·5 × 103 to 65 Θm. These junctions exhibit photovoltaic behaviour with Voc = 220 mV and Isc = 0·20 mA/cm2. © 1986 the Indian Academy of Sciences.
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CITATION STYLE
APA
Kumar, S., Tiwari, A. N., Sastry, O. S., Pandya, D. K., & Chopra, K. L. (1986). a-Si:H/CuInS2 heterojunctions for photovoltaic conversion. Bulletin of Materials Science, 8(3), 285–289. https://doi.org/10.1007/BF02744134
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