A CMOS RF-to-DC Power Converter with 86% Efficiency and-19.2-dBm Sensitivity

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Abstract

This paper proposes an RF-to-dc power converter for ambient wireless powering that is efficient, highly sensitive, and less dependent on the load resistance with an extended dynamic range. The proposed rectifier utilizes a variable biasing technique to control the conduction of the rectifying transistors selectively, hence minimizing the leakage current; unlike the prior work that has a fixed feedback resistors, which limits the efficient operation to a relatively high RF power and causes a drop in the peak power conversion efficiency (PCE). The proposed design is fabricated using a 0.18-μ m standard CMOS technology and occupies an area of 8800 μ m2. The measurement results show an 86% PCE and-19.2-dBm (12 μW) sensitivity when operating at the medical band 433 MHz with a 100-k Ω load. Furthermore, the PCE is 66%, and the sensitivity is-18.2 dBm (15.1 μ W) when operating at UHF 900 MHz with a 100-k Ω load.

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APA

Almansouri, A. S., Ouda, M. H., & Salama, K. N. (2018). A CMOS RF-to-DC Power Converter with 86% Efficiency and-19.2-dBm Sensitivity. IEEE Transactions on Microwave Theory and Techniques, 66(5), 2409–2415. https://doi.org/10.1109/TMTT.2017.2785251

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