Estimation of activity data for the Ga-Sb, Ga-S and Sb-S systems regarding the doped GaSb semiconductor crystals

Abstract

GaSb based materials have been the subject of increasing attention in current semiconductor production. We report the preparation of single crystals grown by the Czochralski technique without encapsulant in a flowing variously doped hydrogen atmosphere. Consequently the Ga-Sb-S system has become important accounting for sulphur doping which requested thermodynamic evaluations based on the minimization of Gibbs energy and/or on the prediction method calculating respective activities from the phase diagram. Beside a survay character of this paper, the actual activity estimation for binaries in question are presented showing a rather high scatter of both published and calculated data.