In this letter, a double active layer (Zr:SiOx/C:SiOx) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiOx layer. Compared with single Zr:SiOx layer structure, Zr:SiOx/C:SiOx structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process. © 2013 Zhang et al.
CITATION STYLE
Zhang, R., Chang, K. C., Chang, T. C., Tsai, T. M., Chen, K. H., Lou, J. C., … Sze, S. M. (2013). High performance of graphene oxide-doped silicon oxide-based resistance random access memory. Nanoscale Research Letters, 8(1), 1–6. https://doi.org/10.1186/1556-276X-8-497
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