Doped Lateral Organic Photovoltaic Cells

Abstract

Doping effects on organic lateral photovoltaic cells with separated carrier-generating and doped carrier-transporting layers are investigated. A doping concentration of 100 ppm into the lateral hole and electron transporting layers doubles the photocurrent density by forming a built-in potential between the layers in the vertical direction of the lateral cell, which accelerates carrier generation. A higher doping concentration induces trap-assisted recombination at direct C8-BTBT/PTCDI-C8 contact points and causes a decrease in photocurrent density.