ZnO films grown on glass substrates using high-energy precursors generated by a catalytic reaction

Abstract

A chemical vapor deposition method using a Pt-catalyzed H 2-O2 reaction was applied to the growth of ZnO films on glass substrates. High-energy ZnO precursors formed by the reaction between H2O molecules generated by the exothermic reaction of H2 and O2 and DMZn gas molecules were supplied to the substrate surface. ZnO films were grown on glass substrates at substrate temperatures of 573-873 K. X-ray diffraction patterns from ZnO films grown at temperatures above 673 K exhibited intense (0002) peaks. Photoluminescence (PL) spectra at 17.8 K showed strong emission peaks between 3.355 eV and 3.3604 eV, which were attributed to the neutral donor-bound exciton Dox. The lowest FWHM of the Dox emission was 6.3 meV, less than that previously reported for ZnO (10 meV) grown on a sapphire substrate at 1073 K using conventional MOCVD.