Self-organization of in nanostructures on Si surfaces

Abstract

Methods of forming various In nanostructures on Si surfaces are demonstrated. Using a high-index Si(311) surface, isolated nanotriangles and wires were grown by optimizing the deposition rate and substrate temperature. In contrast, nanodots were formed by the deposition of In on a Si (111)-In-√31 × √31 surface at room temperature (RT) deposition. On a Si (111) -In-4×1/√31 × √31 coexisting surface, nanowires were selectively grown in the Si (111) -In 4×1 area by RT deposition through the nucleation promoted by the boundary barrier produced by the surrounding √31 × √31 area. Details were studied using scanning tunneling microscopy. © 2009 American Institute of Physics.