Tunnelling effect on triple potential barriers GaN, SiC and GaAs

Abstract

The aim of this research to analyze transmission coefficient on triple potential barriers GaN, SiC and GaAs. Tunnelling effect occurs when the particle has energy E penetrate potential barrier has ethe nergy (E < V). Transmission coefficient is probability of particle to penetrate potential barrier. Transmission coefficient value influenced by potential barrier of material semiconductor. Galium Nitride (GaN) has potential barrier energy 3.39 eV in width 0.3189 nm, Silicon Carbide (SiC) has 2.3 eV and 0.43596 nm, then Galium Arsenide (GaAs) has 1.424 eV and 0.565 nm. In this research, energy maximum of electron is 1 eV. Total propagation obtained by multiply each propagation potential barriers. To obtain value of transmission coefficient, use equation . Based on result, transmission coefficient maximum is obtain when electron has energy 0.9 eV. When electron has energy minimum, transmission coefficient value is 9.9080 10-6. This tunneling effect can be applied to make diode, transistor and IC (Integrated Circuit).