Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device

Abstract

TiN/AlOx:Ti/TaOx/TiN memory devices using bilayer resistive switching memory demonstrated excellent durability and capability of QLC (quad-level cell) memory devices. The best nonvolatile memory characteristics with the lowest operation current and optimized 4 bit/cell states were obtained using the Incremental Step Pulse Programming (ISPP) algorithm in array. As a result, a superior QLC reliability (cycle endurance > 1 k at each level of the QLC, data retention > 2 h at 125◦C) for all the 4 bits/cell operations was achieved in sub-µm scaled RRAM (resistive random access memory) devices.