Synthesis and Electrical Characterization of ZrO2 Thin Films on Si(100)

Abstract

The ZrO 2 thin films deposited on Si(100) were successfully synthesized by sol-gel process and deposited by using spin-coating technique. The structural properties of ZrO 2 thin films were investigated by X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Fourier Transform Infrared Spectroscopy (FT-IR), and electrical properties were studied by conventional techniques like Capacitance-Voltage (C-V) measurement and Current-Voltage (I-V) mea-surement. The XRD of ZrO 2 films shows the films crystallized and exists in two phases at 700˚C calcinations tempera-ture. The C-V characteristics of all the dielectric films that involved distinct inversion, depletion, and accumulation were clearly revealed in MIS structure. I-V characteristics of ZrO 2 thin films on Si shows decreased saturation current on calcinations temperatures. The XPS measurement reveals that a zirconium silicate interfacial layer has formed in the ZrO 2 /Si Systems.