Nano- and Microstructuring of SiO2 and Sapphire with Fs-laser Induced Selective Etching

Abstract

Sub wavelength ripples perpendicular to the polarisation of the laserradiation are obtained by scanning a tightly focused beam (similarto 1 mu m) of femtosecond laser radiation over the surface and throughthe volume of various materials. The ripple patterns extend coherentlyover many overlapping laser pulses and scanning tracks. The cross-sectionsand the surface of the ripples and in volume nanoplanes are investigatedusing electron microscopy. By using microscope objectives with higherNumerical Apertures micro-channels can be fabricated with a techniquecalled In Volume Selective Laser Etching (ISLE).