On a relationship among optical power, current density, and junction temperature for InGaN-based light-emitting diodes

Abstract

Theories of spontaneous emission rates and carrier recombination mechanisms for multiple-quantum-well InGaN-based blue light-emitting diodes (LEDs) have been carefully studied. A relationship among the optical power, the current density, and the temperature (heat-sink temperature or p-n junction temperature) is identified, and an optical-electrical-thermal model (OETM) is proposed. Thereafter, spectral measurements have been carried out to confirm the validity of this OETM. Results show that measured optical powers under various current densities and heat-sink temperatures agree satisfactorily with those determined by the OETM. Furthermore, the traditional forward-voltage method (FVM) has also been carried out for comparison. Junction temperatures determined by this OETM is in accordance with those measured by the FVM. Therefore, this model can serve as an alternative tool for fast estimating junction temperatures after relevant fitting coefficients having been determined.