Abstract
Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid-state platform. We report a color center that shows insensitivity to environmental decoherence caused by phonons and electric field noise: the neutral charge state of silicon vacancy (SiV0). Through careful materials engineering, we achieved >80% conversion of implanted silicon to SiV0. SiV0 exhibits spin-lattice relaxation times approaching 1 minute and coherence times approaching 1 second. Its optical properties are very favorable, with ~90% of its emission into the zero-phonon line and near–transform-limited optical linewidths. These combined properties make SiV0 a promising defect for quantum network applications.
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CITATION STYLE
Rose, B. C., Huang, D., Zhang, Z. H., Stevenson, P., Tyryshkin, A. M., Sangtawesin, S., … De Leon, N. P. (2018). Observation of an environmentally insensitive solid-state spin defect in diamond. Science, 361(6397), 60–63. https://doi.org/10.1126/science.aao0290
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